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US 10,256,242 B2Granted
Memory circuit with thyristor
AssigneeEtron Technology, Inc.
InventorLi-Ping Huang
Life of this patent
Estimating the term…
Abstract
A memory circuit with thyristor includes a plurality of memory cells. Each memory cell of the plurality of memory cells includes an access transistor and a thyristor. The thyristor is coupled to the access transistor. At least one of a gate of the access transistor and a gate of the thyristor has a fin structure.
Claims17
A memory circuit with thyristor, comprising:
- a plurality of memory cells, wherein each memory cell of the plurality of memory cells comprises:
- an access transistor;
- and
- a thyristor coupled to the access transistor;
- wherein at least one of a gate of the access transistor and a gate of the thyristor has a fin structure, and a dielectric zone corresponding to at least one side of at least three sides of a strip semiconductor material surrounded by the fin structure is thicker than dielectric zones corresponding to other sides of the at least three sides of the strip semiconductor material.
2 more elements
A memory circuit with thyristor, comprising:
- a plurality of memory cells, wherein each memory cell of the plurality of memory cells comprises:
- an access transistor;
- and
- a thyristor coupled to the access transistor;
- wherein at least one of a gate of the access transistor and a gate of the thyristor has a fin structure, and at least four sides of a strip semiconductor material are surrounded by the fin structure.
2 more elements
A memory circuit with thyristor, comprising:
- a silicon-on-insulator (SOI) structure layer;
- and
- a plurality of memory cells formed on the SOI structure layer, wherein each memory cell of the plurality of memory cells comprises:
- an access transistor composed of a first strip semiconductor material and a gate of the access transistor, wherein the first strip semiconductor material is formed along a first direction on the SOI structure layer, and the gate of the access transistor is formed along a second direction on the SOI structure layer and covers the first strip semiconductor material;
- and
- a thyristor composed of a second strip semiconductor material and a gate of the thyristor, wherein the second strip semiconductor material is formed along the first direction on the SOI structure layer, and the gate of the thyristor is formed along the second direction and covers the second strip semiconductor material;
- wherein the gate of the access transistor surrounds at least three sides of the first strip semiconductor material, or the gate of the thyristor surrounds at least three sides of the second strip semiconductor material;
- wherein a dielectric zone corresponding to at least one side of the at least three sides of the first strip semiconductor material is thicker than dielectric zones corresponding to other sides of the at least three sides of the first strip semiconductor material, and a dielectric zone corresponding to at least one side of the at least three sides of the second strip semiconductor material is thicker than dielectric zones corresponding to other sides of the at least three sides of the second strip semiconductor material.
5 more elements
Dependencies are inferred from the claim text.