Integrated circuit device and method of manufacturing the same

An integrated circuit device comprising:

• a substrate including a first region and a second region;
• a plurality of first fm-type active regions protruding from the substrate in the first region, the plurality of first fin-type active regions extending parallel to one another, each of the plurality of first fm-type active regions including a first top surface and a first recess having a first depth from the first top surface;
• a first source/drain region filling the first recess of one first fm-type active region among the plurality of first fin-type active regions, the first source/drain region having a first width;
• a plurality of second fin-type active regions protruding from the substrate in the second region, the plurality of second fin-type active regions extending parallel to one another, each of the plurality of second fin-type active regions including a second top surface and a second recess having a second depth from the second top surface, the second depth being greater than the first depth;
• a second source/drain region filling the second recesses of the plurality of second fm-type active regions, respectively,
• the second source/drain region including a plurality of source/drain branch portions and a source/drain merged portion connected to the plurality of source/drain branch portions,
• the source/drain merged portion extending over the plurality of second fin-type active regions across the plurality of second fin-type active regions,
• the second source/drain region having a second width,
• the second width being greater than the first width;
• a first device isolation film covering both lower sidewalls of the one first fin-type active region;
• a second device isolation film covering both lower sidewalls of each of the plurality of second fin-type active regions;
• a first fin insulating spacer covering the first source/drain region over the first device isolation film;
• and
• at least one second fin insulating spacer covering the second source/drain region over the second device isolation film, wherein
• the at least one second fin insulating spacer is spaced apart from the plurality of second fin-type active region,
• the first fin insulating spacer has a first vertical length,
• the at least one second fin insulating spacer has a second vertical length, the second vertical length being less than the first vertical length,
• a top portion of the first fin insulating spacer is at a level not higher than a level of an interface between the one first fin-type active region and the first source/drain region, and
• the at least one second fin insulating spacer protrudes to a higher level than interfaces between the plurality of second fin-type active regions and the second source/drain region.