Semiconductor device including a switching element and a sense diode
AssigneeToyota Jidosha Kabushiki Kaisha
InventorMasaru Senoo
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Abstract
A semiconductor device provided herein includes: a semiconductor substrate; an upper main electrode provided above the semiconductor substrate; a sense anode electrode provided above the semiconductor substrate; a resistance layer provided above the semiconductor substrate and having a resistivity higher than the sense anode electrode; a lower main electrode provided below the semiconductor substrate. The semiconductor substrate includes a switching element and a sense diode. The switching element is connected between the upper main electrode and the lower main electrode. The sense diode comprises a first anode region of a p-type connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode.
Claims4
A semiconductor device, comprising:
- a semiconductor substrate;
- an upper main electrode provided above the semiconductor substrate;
- a sense anode electrode provided above the semiconductor substrate;
- a resistance layer provided above the semiconductor substrate, the resistance layer being configured to allow electric current to flow therethrough and having a resistivity higher than the sense anode electrode;
- and
- a lower main electrode provided below the semiconductor substrate, wherein
- the semiconductor substrate comprises a switching element and a sense diode,
- the switching element is connected between the upper main electrode and the lower main electrode,
- the sense diode comprises a first anode region of a p-type electrically connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode,
- the sense anode electrode comprises a bonding pad configured so that a wire is bonded to the bonding pad,
- the resistance layer comprises a first portion connected to the sense anode electrode under the bonding pad and a second portion extending outward from the bonding pad, and
- the first anode region is not provided under the bonding pad and is connected to the sense anode electrode via the second portion.
A semiconductor device, comprising:
- a semiconductor substrate;
- an upper main electrode provided above the semiconductor substrate;
- a sense anode electrode provided above the semiconductor substrate;
- a resistance layer provided above the semiconductor substrate, the resistance layer being configured to allow electric current to flow therethrough and having a resistivity higher than the sense anode electrode;
- a lower main electrode provided below the semiconductor substrate, wherein
- the semiconductor substrate comprises a switching element and a sense diode,
- the switching element is connected between the upper main electrode and the lower main electrode, and
- the sense diode comprises a first anode region of a p-type electrically connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode;
- and
- a wiring layer provided above the semiconductor substrate, the wiring layer having a resistivity lower than the resistance layer, and being in contact with the first anode region,
- wherein the first anode region is connected to the resistance layer via the wiring layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- an upper main electrode provided above the semiconductor substrate;
- a sense anode electrode provided above the semiconductor substrate;
- a resistance layer provided above the semiconductor substrate, the resistance layer being configured to allow electric current to flow therethrough and having a resistivity higher than the sense anode electrode;
- and
- a lower main electrode provided below the semiconductor substrate, wherein
- the semiconductor substrate comprises a switching element and a sense diode,
- the switching element is connected between the upper main electrode and the lower main electrode,
- the sense diode comprises a first anode region of a p-type electrically connected to the sense anode electrode via the resistance layer and a first cathode region of an n-type connected to the lower main electrode,
- the semiconductor substrate further comprises a freewheel diode, and
- the freewheel diode comprises a second anode region of the p-type connected to the upper main electrode, and a second cathode region of the n-type connected to the lower main electrode.
Dependencies are inferred from the claim text.