US 10,256,230 B2 · Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

Abstract

A method of forming a vertical finFET and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.

Claims20

Dependent claims

A vertical fin field effect transistor (finFET) and a vertical diode device on the same substrate, comprising:

a vertical fin formed on a heavily doped layer, where the heavily doped layer forms a source/drain;
a bottom spacer layer on the heavily doped layer and adjacent the sidewall of the vertical fin;
a high-K dielectric layer on at least a portion of the sidewalls of the vertical fin;
a work function layer on the high-K dielectric layer on the portion of the sidewall of the vertical fin;
a gate metal layer on at least a portion of the work function layer;
a first semiconductor segment on the heavily doped layer;
and
a second semiconductor segment on the first semiconductor segment, where the interface between the second semiconductor segment and the first semiconductor segment is a p-n junction.

5 more elements

Dependencies are inferred from the claim text.

Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

Life of this patent

Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

Life of this patent

Abstract

Claims20