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US 10,256,229 B2Granted
Semiconductor device and manufacturing method
AssigneeFuji Electric Co., Ltd.
InventorTatsuya Naito
Life of this patent
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AssigneeFuji Electric Co., Ltd.
InventorTatsuya Naito
Estimating the term…
It is aimed to realize both of reserving a channel formation region and suppressing a latch-up. A semiconductor device is provided, including: a semiconductor substrate; a plurality of trench portions provided at a front surface side of the semiconductor substrate, each of which has a portion extending in an extending direction; and a first conductivity-type emitter region and a second conductivity-type contact region provided between adjacent two trench portions and exposed on a front surface of the semiconductor substrate alternately in the extending direction, wherein on the front surface of the semiconductor substrate, a length of the emitter region at a central position between the two trench portions is shorter than a length of the emitter region at portions contacting the trench portions, and on the front surface of the semiconductor substrate, at least a part of a boundary of the emitter region has a curved shape.
A semiconductor device comprising:
A manufacturing method for manufacturing a semiconductor device comprising a semiconductor substrate, a plurality of trench portions which are provided at a front surface side of the semiconductor substrate and each of which has a portion extending in an extending direction, and a first conductivity-type emitter region and a second conductivity-type contact region which are provided between adjacent two trench portions and exposed on a front surface of the semiconductor substrate alternately in the extending direction, wherein:
Dependencies are inferred from the claim text.