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US 10,256,228 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYoshihito Uzawa, Yasuyuki Morishita, Masanori Tanaka
Life of this patent
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Abstract
A semiconductor device includes a MOS transistor which is coupled between two terminals and discharges current which flows caused by generation of static electricity and a diode which is coupled between a back gate of the MOS transistor and one of the terminal and has a polarity which is reversed to the polarity of a parasitic diode which is formed between the back gate and a source of the MOS transistor.
Claims20
A semiconductor device, comprising:
- first and second terminals which serve as external terminals of a semiconductor chip;
- an electrostatic destruction protection transistor whose source is coupled to the first terminal and whose drain is coupled to the second terminal;
- a diode which is coupled between a back gate of the electrostatic destruction protection transistor and the first terminal;
- and
- an RC circuit coupled to the first and second terminals, the RC circuit comprising a resistor and a capacitor,
- wherein one of the resistor and the capacitor is located between a gate of the electrostatic destruction protection transistor and a first wiring that couples the diode to the first terminal, and another one of the resistor and the capacitor is located between the gate of the electrostatic destruction protection transistor and a second wiring that couples the back gate of the electrostatic destruction protection transistor to the second terminal, and
- wherein the diode is arranged such that a polarity thereof which occurs in a coupling direction is reversed to a polarity of a parasitic diode which is formed between the back gate and the source of the electrostatic destruction protection transistor.
4 more elements
A semiconductor device, comprising:
- first and second terminals;
- an electrostatic destruction protection transistor coupled to the first and second terminals;
- a diode which is coupled between a back gate of the electrostatic destruction protection transistor and the first terminal;
- and
- an RC circuit coupled to the first and second terminals, the RC circuit comprising a resistor and a capacitor,
- wherein one of the resistor and the capacitor is located between a gate of the electrostatic destruction protection transistor and a first wiring that couples the diode to the first terminal, and another one of the resistor and the capacitor is located between the gate of the electrostatic destruction protection transistor and a second wiring that couples the back gate of the electrostatic destruction protection transistor to the second terminal.
3 more elements
Dependencies are inferred from the claim text.