Multiple-unit semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorMasaya Isobe
Life of this patent
Estimating the term…
Abstract
A multiple-unit semiconductor device (1) includes a normally-ON type first FET (11) and a normally-OFF type second FET (12) that are connected to each other in series between a first terminal and a second terminal (17 and 19). The multiple-unit semiconductor device (1) further includes a protection circuit that includes a switching element for discharge (16) connected to the second FET in parallel and a trigger circuit that is disposed between the first terminal and the second terminal (17 and 19) and causes the switching element for discharge to turn to an ON state when a surge is applied to the first terminal.
Claims6
A multiple-unit semiconductor device including a normally-ON type first FET and a normally-OFF type second FET that are connected to each other in series between a first terminal and a second terminal, the device comprising:
- a protection circuit that includes a switching element for discharge connected to the second FET in parallel and a trigger circuit that is connected in parallel to a series circuit of the first and second FETs and causes the switching element for discharge to turn to an ON state when a surge is applied to the first terminal.
A multiple-unit semiconductor device including a normally-ON type first FET and a normally-OFF type second FET that are connected to each other in series between a first terminal and a second terminal, the device comprising:
- a protection circuit that includes a switching element for discharge connected to the second FET in parallel and a trigger circuit that is disposed between the first terminal and the second terminal and causes the switching element for discharge to turn to an ON state when a surge is applied to the first terminal,
- wherein a part of a plurality of normally-OFF type unit FETs for forming the second FET is diverted to form an FET for discharge as the switching element for discharge.
Dependencies are inferred from the claim text.