Semiconductor package
AssigneeSamsung Electronics Co., Ltd.
InventorKunsil Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor package includes a first semiconductor chip including a through silicon via in the first semiconductor chip and a first trench portion in an upper portion of the first semiconductor chip, a second semiconductor chip on an upper surface of the first semiconductor chip and being electrically connected to the first semiconductor chip through the through silicon via of the first semiconductor chip, and an insulating bonding layer between the first semiconductor chip and the second semiconductor chip. The insulating bonding layer fills the first trench portion.
Claims20
A semiconductor package comprising:
- a first semiconductor chip comprising:
- a first semiconductor substrate having a lower surface and an upper surface which are opposite each other;
- a first semiconductor device layer disposed on the lower surface of the first semiconductor substrate;
- and
- a first through silicon via penetrating the first semiconductor substrate and the first semiconductor device layer;
- a second semiconductor chip stacked on the first semiconductor chip and being electrically connected to the first semiconductor chip through the first through silicon via of the first semiconductor chip;
- and
- an insulating bonding layer between the first semiconductor chip and the second semiconductor chip,
- wherein the first semiconductor chip further includes a trench portion formed on the upper surface of the first semiconductor substrate, and the trench portion is filled with the insulating bonding layer.
A semiconductor package comprising:
- first to third semiconductor chips stacked in a vertical direction, and each of the first to third semiconductor chips comprising:
- a semiconductor substrate having a lower surface and an upper surface which are opposite each other
- a semiconductor device layer disposed on the lower surface of the substrate;
- and
- a through silicon via penetrating the semiconductor substrate and the semiconductor device layer;
- a fourth semiconductor chip stacked on the third semiconductor chip;
- and
- an insulating bonding layer disposed between the first to fourth semiconductor chips,
- wherein each of the first to third semiconductor chip further includes a trench portion formed on the upper surface of the semiconductor substrate, and the trench portion is filled with the insulating bonding layer.
Dependencies are inferred from the claim text.