Multi-chip-module semiconductor chip package having dense package wiring

A system, comprising:

• a planar board,
• a multi-chip module affixed to the planar board, the multi-chip module comprising:
• a build-up layer having a pad side of multiple die pressed into a bottom side of the build-up layer, wherein each die has a topmost surface and a bottommost surface, wherein the multiple die having wide pads to facilitate on wafer testing of the multiple die, the wide pads spaced a minimum distance permitted by a manufacturing process used to manufacture their respective die, the buildup layer being removed above the wide pads, wherein the bottommost surface of the build-up layer is below the topmost surface of each die, and wherein each wide pad is recessed into the die to have the topmost surface lower than the topmost surface of the die;
• metallization on a top side of the build-up layer and substantially filling regions above the wide pads, the metallization including lands above the wide pads and multiple wires between the wide pads.

A method, comprising:

• forming a build-up layer on an adhesion layer of a carrier;
• pressing more than one semiconductor die into the build-up layer, each semiconductor die having been previously functionally tested and having wide pads to facilitate the testing, wherein, at least some of the wide pads on a same die are spaced apart a minimal distance permitted by said die's manufacturing process, wherein the bottommost surface of the build-up layer is below the topmost surface of each die, and wherein each wide pad is recessed into the die to have the topmost surface lower than the topmost surface of the die;
• forming a mold over the more than one semiconductor die;
• detaching the build-up layer from the carrier;
• removing the build-up layer over the at least some of the wide pads to form via openings over the at least some of the wide pads;
• forming a metallization layer on the build-up layer, the metallization layer substantially filling the via openings;
• and
• patterning the metallization to form lands over the filled via openings and more than one wire between respective lands of the at least some of the wide pads, wherein at least one or more wires are spaciously formed between a land of a first die and another land of a second die.