Separation of integrated circuit structure from adjacent chip
AssigneeGlobalfoundries Inc.
InventorsGlen E Richard, Stephen P Ayotte, Hanyi Ding
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure relate to separating an integrated circuit (IC) structure from an adjacent chip. An IC structure according to embodiments of the disclosure may include: a semiconductor region including an interconnect pad positioned thereon, the interconnect pad electrically connected to a solder bump; and an ohmic heating wire positioned within the semiconductor region and in thermal communication with the interconnect pad, wherein the ohmic heating wire is configured to be heated above a melting temperature of the solder bump.
Claims10
An integrated circuit (IC) structure, comprising:
- a semiconductor region including an interconnect pad positioned on an upper surface thereof, the interconnect pad electrically connected to a solder bump;
- an ohmic heating wire positioned within the semiconductor region and in thermal communication with the interconnect pad;
- a voltage source electrically connected to the ohmic heating wire, and configured to increase a temperature of the ohmic heating wire above a melting temperature of the solder bump;
- and
- a through-semiconductor via (TSV) positioned within the semiconductor region and electrically connected to the interconnect pad, wherein the semiconductor region is positioned directly between the ohmic heating wire and the TSV, the ohmic heating wire is in thermal communication with the TSV, and the ohmic heating wire has a greater electrical resistance than the TSV.
An integrated circuit (IC) structure, comprising:
- a semiconductor region including an interconnect pad positioned on an upper surface thereof, the interconnect pad electrically connected to a solder bump;
- a through-semiconductor via (TSV) extending through the semiconductor region and electrically connected to the interconnect pad;
- an ohmic heating wire positioned within the semiconductor region, laterally circumventing the TSV, and in thermal communication with the TSV through the semiconductor region, wherein the semiconductor region is positioned directly between the ohmic heating wire and the TSV, the ohmic heating wire has a greater electrical resistance than the TSV, and a melting temperature of the ohmic heating wire is greater than a melting temperature of the solder bump;
- and
- a voltage source electrically connected to the ohmic heating wire, the voltage source configured to heat the ohmic heating wire above the melting temperature of the solder bump.
Dependencies are inferred from the claim text.