Back to results
US 10,256,197 B2Granted
Radio-frequency isolation using front side opening
AssigneeSkyworks Solutions, Inc.
InventorsJerod F. Mason, Dylan Charles Bartle, David Scott Whitefield
Life of this patent
Estimating the term…
Abstract
A transistor device includes a transistor implemented over a semiconductor substrate, one or more dielectric layers formed over the transistor, and a handle wafer layer disposed on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer.
Claims20
A transistor device comprising:
- a transistor implemented over an oxide layer that was formed on a semiconductor substrate;
- one or more dielectric layers formed over the transistor;
- a handle wafer layer disposed directly on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer;
- and
- a cap layer that covers at least a portion of the handle wafer layer and the topside trench to form a cavity.
2 more elements
A method of fabricating a transistor device comprising:
- forming an oxide layer over a semiconductor substrate;
- disposing an active semiconductor layer on the oxide layer;
- implementing a transistor in the active semiconductor layer;
- forming one or more dielectric layers above the transistor;
- disposing a handle wafer layer directly on at least a portion of the one or more dielectric layers;
- removing at least a portion of the handle wafer layer to form a topside opening in the handle wafer layer;
- and
- covering the topside opening in the handle wafer layer with a cap layer to form a cavity.
5 more elements
A radio-frequency module comprising:
- a switching device having a transistor;
- one or more dielectric layers formed over at least a portion of the transistor;
- a handle wafer layer disposed directly on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer;
- and
- a cap layer that covers at least a portion of the handle wafer layer and the topside trench to form a cavity.
2 more elements
Dependencies are inferred from the claim text.