Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device, the method including:

• a step of forming a metal thin-film wiring layer on a front surface of a support plate;
• a step of laminating a first interlayer insulating material which does not contain reinforced fibers on the metal thin-film wiring layer to form a first insulating material layer;
• a step of mounting semiconductor elements on the first insulating material layer via an adhesive such that element circuit surfaces having electrodes face upward;
• a step of enclosing the semiconductor elements and peripheries thereof with a second interlayer insulating material which does not contain reinforced fibers;
• a step of forming, in the second interlayer insulating material, metal via holes that reach the metal thin-film wiring layer and the electrodes of the semiconductor elements;
• a step of forming a metal thin-film wiring layer and metal vias on the second interlayer insulating material;
• a step of forming a second insulating material layer by repeating the steps of forming the second interlayer insulating material, forming the holes, and forming the metal thin-film wiring layer and the metal vias;
• a step of forming a solder resist layer on the second insulating material layer and mounting electronic components;
• a step of enclosing the electronic components with an insulating resin to form a warpage adjustment layer;
• and
• a step of peeling off the support plate from the first insulating material layer to expose a front surface of the metal thin-film wiring layer,
• the warpage adjustment layer having a physical property of offsetting warpage of the first insulating material layer and the second insulating material layer to reduce warpage of the semiconductor device.