Hybrid dielectric scheme for varying liner thickness and manganese concentration

A semiconductor device comprising:

• a semiconductor substrate;
• porous and dense dielectrics disposed on the semiconductor substrate with porous-over-dense dielectric layering;
• a via suspended at least partially within the dense dielectric;
• an interconnect line suspended at least partially within the porous dielectric;
• a manganese-based self-formed-barrier (SFB) formed about a portion of the via;
• and
• a liner deposited about a portion of the interconnect line,
• wherein:
• the portion of the via about which the manganese-based SFB is formed is suspended entirely within the dense dielectric and the portion of the interconnect about which the liner is deposited is suspended partially within the porous dielectric, and
• the manganese-based SFB is formed from a first concentration of manganese (MN) in the via conductive element, the liner is relatively thick as compared to the manganese-based SFB and the interconnect line has a second concentration of Mn, which is lower than the first concentration.