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US 10,256,187 B2Granted
Semiconductor device with slotted backside metal for improving Q factor
AssigneeWin Semiconductors Corp.
InventorsJui-Chieh Chiu, Chih-Wen Huang, You-Cheng Lai
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.
Claims19
A semiconductor device, comprising:
- a semiconductor substrate;
- a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure;
- and
- a first backside metal and a second backside metal formed under a backside of the semiconductor substrate;
- wherein a hollow slot is formed between the first backside metal and the second backside metal, and a projection of the winding structure is within the hollow slot;
- wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure;
- wherein an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure.
4 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a winding structure formed on a top side of a semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure, and the one or more metal lines are disposed in one or more metal layers;
- forming a first backside metal and a second backside metal under a backside of the semiconductor substrate;
- and
- forming a hollow slot between the first backside metal and the second backside metal, wherein a projection area of the winding structure is within the hollow slot, and an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure;
- wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure.
2 more elements
Dependencies are inferred from the claim text.