Interconnect structure having subtractive etch feature and damascene feature
AssigneeInternational Business Machines Corporation
InventorsGriselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Elbert E. Huang, Naftali E. Lustig, Andrew H. Simon
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Abstract
Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner.
Claims16
A method of forming an interconnect structure, the method comprising:
- depositing a first conductive material on a substrate;
- subtractively etching the first conductive material to form a subtractive etch feature having a first subtractive etch vertical wall, a second subtractive etch vertical wall, and an angle between a first vertical wall and a horizontal plane that is less than 90 degrees;
- depositing a dielectric layer on a patterned first conductive layer of the interconnect structure;
- patterning a trench in the dielectric layer;
- depositing a second conductive material on the patterned dielectric layer;
- and
- removing the second conductive material to the top of a second metal liner so as to form a damascene feature having a first damascene vertical wall, a second damascene vertical wall, and an angle between the first damascene vertical wall and the horizontal plane that is greater than 90 degrees.
An interconnect structure comprising:
- a subtractive etch feature comprising a first conductive material, the subtractive etch feature having a first subtractive etch vertical wall, a second subtractive etch vertical wall, and an angle between a first vertical wall and a horizontal plane that is less than 90 degrees;
- a damascene feature comprising a second conductive material, the damascene feature having a first damascene vertical wall, a second damascene vertical wall, and an angle between the first damascene vertical wall and the horizontal plane that is greater than 90 degrees;
- and
- a conductive via comprising the subtractive etch feature, and wherein the conductive via extends from a first interconnect layer to a second interconnect layer.
An interconnect structure comprising:
- a subtractive etch feature comprising a first conductive material, the subtractive etch feature having a first subtractive etch vertical wall, a second subtractive etch vertical wall, and an angle between a first vertical wall and a horizontal plane that is less than 90 degrees;
- a damascene feature comprising a second conductive material, the damascene feature having a first damascene vertical wall, a second damascene vertical wall, and an angle between the first damascene vertical wall and the horizontal plane that is greater than 90 degrees;
- and
- comprising a conductive via comprising the damascene feature, and wherein the conductive via extends from a first interconnect layer to a second interconnect layer.
Dependencies are inferred from the claim text.