Nitridization for semiconductor structures
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Roger A. Quon, Hosadurga K. Shobha, Terry A. Spooner, Wei Wang, Chih-Chao Yang
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor structure includes the following steps. A substrate including a dielectric material is formed. A surface of the substrate is molecularly modified to convert the surface of the substrate to a nitrogen-enriched surface. A metal layer is deposited on the molecularly modified surface of the substrate interacting with the molecularly modified surface to form a nitridized metal layer.
Claims20
A method for fabricating a semiconductor structure, comprising:
- forming a substrate, wherein the substrate comprises a dielectric material;
- molecularly modifying at least a portion of a surface of the substrate to convert at least a portion of the surface of the substrate to a nitrogen-enriched surface, wherein the modifying step further comprises assembling a set of molecular components on at least a portion of the surface of the substrate, and wherein each molecule of the set comprises a first functional group, a second functional group selected from the group consisting of a nitrile, and an azide, and a connector;
- and
- depositing a metal layer on the molecularly modified surface of the substrate, wherein the deposited metal layer interacts with the modified surface to form a nitridized metal layer.
A semiconductor structure, comprising:
- a substrate, wherein the substrate comprises a dielectric material and a surface, wherein at least a portion of the surface of the substrate comprises a nitrogen-enriched surface, wherein the nitrogen-enriched surface comprises a set of molecular components, and wherein each molecule of the set comprises a first functional group, a second functional group selected from the group consisting of a nitrile, and an azide, and a connector;
- and
- a metal layer deposited on the nitrogen-enriched surface, wherein the deposited metal layer interacts with the nitrogen-enriched surface to form a nitridized metal layer.
An integrated circuit, comprising:
- a substrate, wherein the substrate comprises a dielectric material and a surface, wherein at least a portion of the surface of the substrate comprises a nitrogen-enriched surface, wherein the nitrogen-enriched surface comprises a set of molecular components, and wherein each molecule of the set comprises a first functional group, a second functional group selected from the group consisting of a nitrile, and an azide, and a connector;
- a metal layer deposited on the nitrogen-enriched surface, wherein the deposited metal layer interacts with the nitrogen-enriched surface to form a nitridized metal layer;
- and
- a metal interconnect layer deposited on the nitridized metal layer.
Dependencies are inferred from the claim text.