Integrated interposer solutions for 2D and 3D IC packaging

A method for making an integrated circuit (IC) package, the method comprising:

• providing a first substrate having a back side surface, a top surface and a cavity disposed in the top surface, the cavity having a floor defining a front side surface;
• forming a plurality of first electroconductive contacts on the front side surface;
• obtaining one or more first dies, and electroconductively coupling each first die to corresponding ones of the first electroconductive contacts, each first die containing an IC;
• after said electroconductively coupling each first die, processing a top surface of at least one first die to reduce a final thickness of the IC package;
• permanently sealingly attaching a bottom surface of a second substrate to the top surface of the first substrate;
• and
• after said permanently sealingly attaching the bottom surface of the second substrate to the top surface of the first substrate, forming a plurality of second electroconductive contacts on the back side surface and a plurality of electroconductive elements penetrating through the first substrate and interconnecting selected ones of the first electroconductive contacts and the second electroconductive contacts to each other;
• wherein forming a plurality of the second electroconductive contacts and a plurality of electroconductive elements comprises:
• forming a plurality of through-holes in the first substrate;
• and
• forming the electroconductive elements in the through-holes.

A method for making an integrated circuit (IC) package, the method comprising:

• providing a first substrate having a back side surface, a top surface and a cavity disposed in the top surface, the cavity having a floor defining a front side surface;
• forming electroconductive contacts on respective ones of the front and back side surfaces;
• forming a plurality of electroconductive elements penetrating through the first substrate and interconnecting selected ones of the electroconductive contacts respectively disposed on the front and back side surfaces to each other;
• obtaining one or more first dies, and electroconductively coupling each first die to corresponding ones of the first electroconductive contacts, each first die containing an IC;
• after said electroconductively coupling each first die, processing a top surface of at least one first die to reduce a final thickness of the IC package;
• permanently sealingly attaching a bottom surface of a second substrate to a top surface of at least one first die, the bottom surface of the second substrate covering the cavity;
• and
• after said permanently sealingly attaching the bottom surface of the second substrate to the top surface of at least one first die, applying a thinning process to the back side surface of the first substrate to further reduce the final thickness of the IC package.