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US 10,256,164 B2Granted
Semiconductor film and field effect transistor having semiconductor and polymer portions stacked adjacent each other
AssigneeThe University of Tokyo
InventorsJunichi Takeya, Junshi Soeda
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Abstract
The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.
Claims3
A semiconductor film comprising:
- a semiconductor portion that is formed from an organic semiconductor material and comprises crystals and has a width of 1 mm or more;
- and
- a polymer portion that is formed from a polymer material, wherein:
- each of the semiconductor portion and the polymer portion has a layer shape, and the semiconductor portion and the polymer portion are stacked adjacent to each other in a stacking direction,
- an angle between orientation axes of the crystals is 10 degrees or less, and
- each crystal has a length of 200 μm or more.
3 more elements
Dependencies are inferred from the claim text.