Substrate processing system, control device, and substrate processing method

A control device that controls an operation of a substrate processing apparatus capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container by supplying an etching gas, the control device comprising:

• a first acquisition unit configured to acquire, as information, an amount of a film forming material formed on one of the plurality of substrates;
• a second acquisition unit configured to acquire, as information, the number of the plurality of substrates accommodated in the processing container;
• a first calculating unit configured to calculate a total amount of the film forming material formed on the plurality of substrates accommodated in the processing container based on the amount of the film forming material acquired by the first acquisition unit and the number of the plurality of substrates acquired by the second acquisition unit;
• and
• a second calculating unit configured to calculate an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials calculated by the first calculating unit and a relationship between a predetermined amount of the film forming material and an etching condition.

A substrate processing method comprising:

• an etching process of collectively performing an etching processing collectively on a plurality of substrates accommodated in a processing container by supplying an etching gas, the etching process including:
• a first acquisition step of acquiring, as information, an amount of a film forming material formed on one of the plurality of substrates;
• a second acquisition step of acquiring, as information, the number of the plurality of substrates accommodated in the processing container;
• a first calculating step of calculating a total amount of the film forming material formed on the plurality of substrates accommodated in the processing container based on the amount of the film forming material acquired by the first acquisition unit and the number of the plurality of substrates acquired by the second acquisition unit;
• and
• a second calculating step of calculating an etching condition an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials calculated by the first calculating unit and a relationship between a predetermined amount of the film forming material and an etching condition.