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US 10,256,160 B1Granted
Method for protecting epitaxial layer by forming a buffer layer on NMOS region
AssigneeUnited Microelectronics Corp.
InventorsChun-Hao Lin, Hsin-Yu Chen, Shou-Wei Hsieh
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first gate structure on the first region and a second gate structure on the second region; forming a first spacer around the first gate structure; forming a first epitaxial layer adjacent to two sides of the first spacer; forming a buffer layer on the first gate structure; and forming a contact etch stop layer (CESL) on the buffer layer on the first region and the second gate structure on the second region.
Claims7
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first gate structure on the first region and a second gate structure on the second region;
- a first spacer around the first gate structure and a second spacer around the second gate structure;
- a first epitaxial layer adjacent to two sides of the first spacer;
- a buffer layer on the first epitaxial layer and the first spacer, wherein the buffer layer comprises a horizontal surface parallel to a top surface of the substrate and the buffer layer and the first spacer comprise a same material;
- and
- a contact etch stop layer (CESL) on and directly contacting the horizontal surface of the buffer layer and the second spacer.
4 more elements
Dependencies are inferred from the claim text.