Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device
AssigneeInternational Business Machines Corporation
InventorsRuqiang Bao, Hemanth Jagannathan, ChoongHyun Lee, Shogo Mochizuki
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Abstract
A method is presented for forming a semiconductor structure. The method includes forming a silicon (Si) channel for a first device, forming a first interfacial layer over the Si channel, forming a silicon-germanium (SiGe) channel for a second device, forming a second interfacial layer over the SiGe channel, and selectively removing germanium oxide (GeOX) from the second interfacial layer by applying a combination of hydrogen (H2) and hydrogen chloride (HCl). The second interfacial is silicon germanium oxide (SiGeOX) and removal of the GeOX results in formation of a pure silicon dioxide (SiO2) layer.
Claims10
A method for forming a semiconductor structure, the method comprising:
- forming a first channel for a first device;
- forming a first interfacial layer in direct contact with the first channel;
- forming a second channel for a second device;
- forming a second interfacial layer in direct contact with the second channel, where the first interfacial layer is constructed from a different material than the second interfacial layer;
- and
- selectively removing germanium oxide (GeOX) from the second interfacial layer by applying a combination of gases to convert the first interfacial layer to have a same chemical compound as the second interfacial layer;
- and
- depositing a high-k metal gate in direct contact with the converted first interfacial layer.
Dependencies are inferred from the claim text.