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US 10,256,156 B2Granted
Vertical field effect transistors
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.
Claims4
A method, comprising:
- forming first and second gate structures each comprising:
- a fin body composed of semiconductor material, the fin body having a first end and a second end opposite the first end;
- a top portion of semiconductor material on the second end of the fin body and having a width larger than that of the fin body;
- a first silicide contact at the first end of the fin body;
- a second silicide contact at the top portion of the semiconductor material on the second end of the fin body;
- a gate dielectric material on a sidewall of the fin body;
- and
- a gate material on the gate dielectric material.
5 more elements
Dependencies are inferred from the claim text.