Method for fabricating single diffusion break structure directly under a gate line
AssigneeUnited Microelectronics Corp.
InventorsWen-Kai Lin, Yi-Chung Sheng, Sheng-Yuan Hsueh, Chih-Kai Kang
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a first active region and a second active region extending along a first direction on a substrate; forming a first single diffusion break (SDB) structure extending along a second direction between the first active region and the second active region; and forming a first gate line extending along the second direction intersecting the first active region and the second active region. Preferably, the first SDB structure is directly under the first gate line between the first active region and the second active region.
Claims20
A method for fabricating semiconductor device, comprising:
- forming a first active region and a second active region extending along a first direction on a substrate;
- forming a first single diffusion break (SDB) structure extending along a second direction between the first active region and the second active region, wherein an edge of the first SDB structure is aligned with and overlapping an edge of the first active region and an edge of the second active region;
- and
- forming a first gate line extending along the second direction intersecting the first active region and the second active region, wherein the first SDB structure is directly under the first gate line between the first active region and the second active region.
A semiconductor device, comprising:
- a first active region and a second active region extending along a first direction on a substrate;
- a first single diffusion break (SDB) structure extending along a second direction between the first active region and the second active region, wherein an edge of the first SDB structure is aligned with and overlapping an edge of the first active region and an edge of the second active region;
- and
- a first gate line extending along the second direction intersecting the first active region and the second active region, wherein the first SDB structure is directly under the first gate line between the first active region and the second active region.
Dependencies are inferred from the claim text.