Uniform shallow trench isolation
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Junli Wang, Peng Xu, Chen Zhang
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Abstract
A method for forming a field-effect transistor (FET) including forming a plurality of individual fins on a substrate. The method continues with forming a dummy anchor structure, with the dummy anchor located outside the outermost fin. The fins and dummy anchor define a trench, where the trench has a width dimension. The method continues with depositing a shallow trench isolation (STI) material into the trench and between the fins, where the STI material places uniform tension stresses on both sides of the individual fins.
Claims20
A field-effect transistor (FET) device comprising:
- a plurality of individual fins on a substrate;
- a dummy anchor structure, wherein the dummy anchor structure is located outside the outermost fin and includes a first liner material and a second liner material directly above the first liner material;
- and
- a shallow trench isolation (STI) material deposited between the dummy anchor structure and the outermost fin and between the fins.
The device of 16, wherein the work function setting layer is a nitride.
Dependencies are inferred from the claim text.