Semiconductor apparatus and manufacturing method

A method for manufacturing a semiconductor apparatus, comprising:

• providing a substrate structure, wherein the substrate structure comprises:
• a substrate;
• one or multiple fins positioned along a first direction on the substrate;
• and
• a separation region surrounding the fins,
• wherein an upper surface of the separation region is on a substantially same horizontal level as an upper surface of the fins, the separation region comprises a first separation region neighboring a first side of the fins along the first direction, and a second separation region neighboring a second side of the fins along a second direction that is different from the first direction;
• forming a first insulation layer on the substrate structure;
• forming a second insulation layer on the first insulation layer;
• forming a barrier layer on a first portion of the second insulation layer on the first separating region;
• performing a first etching process using the barrier layer as a mask to remove a second portion of the second insulation layer that is not covered by the barrier layer;
• removing the barrier layer;
• performing a second etching process using the remaining second insulation layer as a mask to remove a portion of the first insulation layer that is not covered by the remaining second insulation layer;
• forming a third insulation layer on side surfaces of the remaining first insulation layer and the remaining second insulation layer;
• performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask to remove a portion of the second separation region that is not covered by the remaining second insulation layer or the third insulation layer;
• and
• removing the remaining second insulation layer and the third insulation layer.