Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge
AssigneeGlobalfoundries Inc.
InventorsQun Gao, Naved Siddiqui, Anthony I. Chou
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Abstract
One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material liner layer, removing portions of the conformal piezoelectric material liner layer positioned above the recessed layer of insulating material to thereby expose a portion of the fin above the recessed upper surface, and forming a gate structure above the recessed layer of insulating material and around a portion of the fin positioned above the recessed upper surface.
Claims15
A method of forming a FinFET device, comprising:
- forming a plurality of fin-formation trenches in a semiconductor substrate so as to thereby form a fin that comprises opposing lateral sidewalls;
- forming a conformal piezoelectric material liner layer on at least said opposing lateral sidewalls of said fin;
- forming a recessed layer of insulating material in said fin-formation trenches and on said conformal piezoelectric material liner layer, said recessed layer of insulating material having a recessed upper surface;
- removing portions of said conformal piezoelectric material liner layer positioned above said recessed upper surface to thereby expose a portion of said fin above said recessed upper surface;
- and
- forming a gate structure above said recessed upper surface and around a portion of said fin positioned above said recessed upper surface.
A method of forming a FinFET device, comprising:
- forming a plurality of fin-formation trenches in a semiconductor substrate so as to thereby form a fin that comprises opposing lateral sidewalls, said fin-formation trenches having a bottom surface;
- performing a conformal deposition process to form a conformal seed layer on said opposing lateral sidewalls of said fin and on said bottom surface of said fin-formation trenches;
- performing at least one epitaxial growth process to form a conformal non-ferroelectric piezoelectric material liner layer on said conformal seed layer;
- performing an anisotropic etching process to remove substantially all of said conformal non-ferroelectric piezoelectric material liner layer positioned on said bottom surface of said fin-formation trenches while leaving portions of said conformal non-ferroelectric piezoelectric material liner layer positioned on at least said opposing lateral sidewalls of said fin;
- forming a tensile-stressed recessed layer of insulating material in said fin-formation trenches and on said conformal non-ferroelectric piezoelectric material liner layer, said recessed layer of insulating material having a recessed upper surface;
- removing portions of said conformal non-ferroelectric piezoelectric material liner layer positioned above said recessed upper surface to thereby expose a portion of said fin above said recessed upper surface;
- and
- forming a gate structure above said recessed upper surface and around a portion of said fin positioned above said recessed upper surface.
Dependencies are inferred from the claim text.