Method of making a finFET device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hao Wang, Ching-Wei Tsai, Chin-Chi Wang
Life of this patent
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Abstract
A method for fabricating a fin field-effect transistor (FinFET) device includes forming a first dielectric layer over a substrate and then etching the first dielectric layer and the substrate to form a first fin and a second fin. A second dielectric layer is formed along sidewalls of the first fin and the second fin. A protection layer is deposited over the first fin and the second fin. A portion of the protection layer and the first dielectric layer on the second fin is removed and the second fin is then recessed to form a trench. A semiconductor material layer is epitaxially grown in the trench. The protection layer is removed to reveal the first fin and the second fin.
Claims20
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- forming a first dielectric layer having a first thickness over a substrate;
- etching the first dielectric layer and the substrate to form a first fin and a second fin, with the first dielectric layer above the first fin and the second fin;
- forming a protection layer over the first fin and the second fin;
- removing a portion of the first dielectric layer on the second fin;
- after forming the protection layer, recessing the second fin to form a trench having a bottom surface of the recessed second fin and sidewalls of the protection layer, wherein the protection layer masks the first fin during the recessing of the second fin;
- and
- epitaxially growing a semiconductor material layer on the bottom surface of the recessed second fin in the trench.
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- providing a first fin and a second fin each having a first dielectric layer having a first thickness thereover;
- providing an isolation layer filling in a portion of space between the first fin and the second fin;
- forming a second dielectric layer along sidewalls of the first fin and the second fin above the isolation layer, wherein the second dielectric layer has a second thickness which is different from the first thickness;
- removing a portion of the first dielectric layer on the second fin;
- recessing the second fin to form a trench;
- and
- epitaxially growing a first semiconductor material layer on the recessed second fin in the trench, while the first dielectric layer is disposed on the first fin.
A method for fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- providing a first dielectric layer having a first thickness over a first fin and a second fin;
- depositing a protection layer over the first fin, the second fin, and the first dielectric layer;
- removing a portion of the protection layer over the second fin to form an opening in the protection layer;
- while the protection layer is disposed over the first fin, recessing the second fin to form a first trench under the opening in the protection layer;
- and
- epitaxially growing a first semiconductor material layer in the first trench over the recessed second fin.
Dependencies are inferred from the claim text.