Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Baozhen Li, Kirk David Peterson, John E. Sheets, II, Junli Wang, Chih-Chao Yang
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Abstract
A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, and forming a copper contact in the first and second contact holes.
Claims18
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial layer in a first contact hole of a first dielectric layer;
- forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole;
- removing the sacrificial layer from the first contact hole;
- and
- forming a copper contact in the first and second contact holes, comprising:
- depositing a copper layer on a surface of the second dielectric layer;
- and
- reflowing the copper layer from the surface of the second dielectric layer into the first contact hole, and from the first contact hole into the second contact hole.
A method of forming a semiconductor device, the method comprising:
- forming a first liner layer in a first contact hole of a first dielectric layer;
- forming a sacrificial layer on the first liner layer to fill the first contact hole;
- forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole;
- forming a second liner layer on the second dielectric layer and in the second contact hole;
- removing the sacrificial layer from the first contact hole;
- and
- forming a copper contact in the first and second contact holes, comprising:
- depositing a copper layer on a surface of the second liner layer;
- and
- reflowing the copper layer from the surface of the second dielectric layer into the first contact hole, and from the first contact hole into the second contact hole.
Dependencies are inferred from the claim text.