Process integration approach of selective tungsten via fill
AssigneeApplied Materials, Inc.
InventorsHe Ren, Feiyue Ma, Yu Lei, Kai Wu, Mehul B. Naik, Zhiyuan Wu, Vikash Banthia, Hua Al
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Abstract
Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.
Claims20
A method of forming an interconnect, comprising:
- forming a via and a trench in a film stack formed on a substrate;
- pre-treating a bottom of the via;
- pre-treating a sidewall of the via;
- depositing a first metal layer formed from a first material of a first type in the via;
- treating a top surface of the first metal layer;
- then
- depositing a second metal layer formed from a second material of a second type in the trench.
A method of forming an interconnect, comprising:
- depositing a dielectric barrier layer over a first dielectric layer and a conductive layer;
- depositing a second dielectric layer over the dielectric barrier layer;
- forming a via through the second dielectric layer and the dielectric barrier layer;
- forming a trench in the second dielectric layer;
- pre-treating a bottom of the via;
- pre-treating a sidewall of the via;
- depositing a first metal layer formed from a first material of a first type in the via;
- and
- depositing a second metal layer formed from a second material of a second type in the trench.
A method of forming an interconnect, comprising:
- forming a via and a trench in a film stack formed on a substrate;
- pre-treating a bottom of the via, comprising:
- transferring the substrate to a first pre-treatment chamber,
- applying a remote plasma clean process to the film stack, and
- treating an exposed portion of a conductive layer at the bottom of the via;
- pre-treating a sidewall of the via;
- depositing a first metal layer formed from a first material of a first type in the via;
- and
- depositing a second metal layer formed from a second material of a second type in the trench.
Dependencies are inferred from the claim text.