Replacement contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYee-Chia Yeo, Teng-Chun Tsai, Yasutoshi Okuno
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Abstract
The present disclosure describes a method of forming a replacement contact. For example, the replacement contact can include a metal with one or more first sidewall surfaces and a top surface. A first dielectric can be formed to abut the one or more first sidewall surfaces of the metal. A second dielectric can be formed over the first dielectric and the top surface of the metal. An opening in the second dielectric can be formed. A metal oxide structure can be selectively grown on the top surface of the metal, where the metal oxide structure has one or more second sidewall surfaces. One or more spacers can be formed to abut the one or more second sidewall surfaces of the metal oxide structure. Further, the metal oxide structure can be removed.
Claims20
A method of forming a replacement contact, the method comprising:
- forming a first metal in a first dielectric, wherein the first metal comprises a top surface;
- forming a metal oxide structure, with one or more sidewall surfaces, over the first metal;
- forming one or more spacers abutting the one or more sidewall surfaces of the metal oxide structure;
- forming a second dielectric abutting the one or more spacers to cover the first dielectric;
- and
- forming an opening in the metal oxide structure to expose a portion of the top surface of the first metal.
A method of forming a replacement contact, the method comprising:
- forming a first metal in a first dielectric, wherein the first metal comprises an exposed top surface;
- forming, over the first dielectric, a self-assembled monolayer to expose the top surface of the first metal;
- growing a metal oxide structure over the first metal, wherein the metal oxide structure comprises one or more first sidewall surfaces;
- removing the self-assembled monolayer;
- forming one or more spacers abutting the one or more first sidewall surfaces of the metal oxide structure;
- forming a second dielectric abutting the one or more spacers, wherein the second dielectric covers the first dielectric;
- and
- removing the metal oxide structure to expose a portion of the top surface of the first metal.
A method of forming a replacement contact, the method comprising:
- depositing, in a first dielectric, a metal that comprises an exposed top surface;
- forming a metal oxide structure, with one or more sidewall surfaces, over the metal;
- forming a second dielectric that abuts the metal oxide structure and covers the first dielectric;
- and
- removing the metal oxide structure to expose the top surface of the metal with a selective etch process.
Dependencies are inferred from the claim text.