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US 10,256,141 B2Granted
Maskless air gap to prevent via punch through
AssigneeIntel Corporation
InventorsManish Chandhok, Todd R. Younkin, Eungnak Han, Jasmeet S. Chawla, Marie Krysak, Hui Jae Yoo, Tristan A. Tronic
Life of this patent
Estimating the term…
Abstract
A first etch stop layer is deposited on a plurality of conductive features on an insulating layer on a substrate. A second etch stop layer is deposited over an air gap between the conductive features. The first etch stop layer is etched to form a via to at least one of the conductive features.
Claims20
A method to manufacture an electronic device, comprising:
- depositing a first etch stop layer on a top surface of a plurality of conductive features on an insulating layer on a substrate;
- subsequent to depositing the first etch stop layer, depositing a second etch stop layer over an air gap between the plurality of conductive features;
- and
- etching the first etch stop layer to form a via to at least one of the plurality of conductive features.
1 more element
A method to provide a maskless air gap process, comprising:
- curing a first sacrificial layer on a plurality of conductive features on an insulating layer on a substrate to align a first material of the first sacrificial layer to first portions of the insulating layer between respective ones of the plurality of conductive features and to align a second material of the first sacrificial layer to respective ones of the plurality of conductive features;
- etching the first material to expose the first portions of the insulating layer;
- depositing a second sacrificial layer onto the exposed first portions of the insulating layer;
- removing the second sacrificial layer to expose portions of respective ones of the plurality of conductive features;
- depositing a first etch stop layer on the exposed portions of the plurality of conductive features;
- and
- forming an air gap between at least two of the plurality of conductive features.
4 more elements
A method to manufacture an electronic device, comprising:
- depositing a first sacrificial layer on a plurality of conductive features on an insulating layer on a substrate, wherein a first material of the first sacrificial layer is deposited on first portions of the insulating layer between respective ones of the plurality of conductive features and a second material layer of the first sacrificial layer is deposited on respective ones of the plurality of conductive features;
- removing the second material layer to expose portions of the plurality of conductive features;
- depositing a first etch stop layer on the exposed portions of the plurality of conductive features;
- depositing a second etch stop layer over an air gap between respective ones of the plurality of conductive features;
- and
- etching the first etch stop layer to form a via to at least one of the plurality of conductive features.
3 more elements
Dependencies are inferred from the claim text.