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US 10,256,138 B2Granted
Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding
AssigneeKulite Semiconductor Products, Inc.
InventorsAlexander A. Ned, Sorin Stefanescu, Joseph R. VanDeWeert
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Abstract
A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.
Claims15
A method comprising:
- oxidizing a surface of a first semiconductor wafer to produce an oxidized layer having an oxidized surface, the first semiconductor wafer having a base layer;
- degenerately doping the first semiconductor wafer through the oxidized layer to produce a doped region;
- doping the oxidized surface to provide a doped skin;
- bonding an oxidized second semiconductor wafer to the doped skin;
- after bonding the oxidized second semiconductor wafer to the doped skin, removing the base layer from the first semiconductor wafer to expose a portion of the doped region;
- and
- patterning the exposed portion of the doped region to define a piezoresistive pattern on the exposed portion.
4 more elements
A method for fabricating a silicon-on-insulator device, comprising:
- bonding a first semiconductor wafer, having a base layer, a degenerately doped layer disposed on the base layer, and a first oxidized layer disposed on the doped layer, to a second semiconductor wafer having a second oxidized layer disposed thereon, wherein the degenerately doped layer is doped to a generally uniform depth through the oxidized layer, and further wherein the bond is between the first oxidized layer and the second oxidized layer;
- removing, without using a buried oxide etch stop, the base layer of the first semiconductor wafer to expose the doped layer;
- and
- patterning the exposed doped layer to define a piezoresistive pattern on the exposed doped layer.
1 more element
Dependencies are inferred from the claim text.