Method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device may include forming a first stack structure by alternately stacking first material layers and second material layers, forming first holes penetrating the first stack structure and a first slit located between the first holes, forming channel patterns in the first holes and a dummy channel pattern in the first slit, selectively removing the dummy channel pattern from the first slit, and replacing the first material layers with third material layers through the first slit.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first stack structure by alternately stacking first material layers and second material layers;
- forming first holes and a first slit, the first holes penetrating the first stack structure, the first slit being located between the first holes;
- forming channel patterns in the first holes and a dummy channel pattern in the first slit;
- selectively removing the dummy channel pattern from the first slit;
- and
- replacing the first material layers with third material layers through the first slit.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first stack structure by alternately stacking first sacrificial layers and the first insulating layers;
- forming first holes and a first slit, the first holes penetrating the first stack structure, the first slit being located between the first holes;
- forming, on the first stack structure, a second stack structure by alternately stacking second sacrificial layers and second insulating layers;
- forming second holes and a second slit, the second holes penetrating the second stack structure and being connected to the first holes, the second slit penetrating the second stack structure and being connected to the first slit;
- forming channel patterns in the first and second holes and a dummy channel pattern in the first and second slits;
- selectively removing the dummy channel pattern;
- and
- replacing the first and second sacrificial layers with conductive layers through the first and second slits.
A method of manufacturing a semiconductor device, the method comprising:
- forming a structure by alternately stacking first material layers and second material layers;
- forming holes and a slit using a same mask pattern, the holes penetrating the stack structure, the slit being located between the holes;
- forming channel patterns in the holes and a dummy channel pattern in the slit, wherein the dummy channel pattern is formed when the channel patterns are formed;
- selectively removing the dummy channel pattern from the slit;
- and
- replacing the first material layers with third material layers through the slit.
Dependencies are inferred from the claim text.