Semiconductor device with tiered pillar and manufacturing method thereof
AssigneeAmkor Technology, Inc.
InventorsRonald Patrick Huemoeller, Michael G. Kelly, Curtis Zwenger
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Abstract
A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.
Claims16
A method of manufacturing a semiconductor device, the method comprising:
- electrically connecting a semiconductor die to an interposer, the semiconductor die having a top surface, a bottom surface, and one or more side surfaces adjoining the top surface to the bottom surface;
- forming a first tier of a conductive pillar such that the first tier is peripherally beyond the one or more side surfaces of the semiconductor die and the first tier is electrically connected to the interposer, wherein said forming the first tier comprises:
- forming a first layer over the interposer;
- forming a first hole through the first layer to expose the interposer;
- and
- filling the first hole with conductive material to form the first tier electrically connected to the interposer;
- and
- forming a second tier of the conductive pillar such that the second tier is on and electrically connected to the first tier of the conductive pillar, wherein said forming the second tier comprises:
- forming a second layer over the first layer and the first tier;
- forming a second hole through the second layer and over the first tier to expose the first tier;
- and
- filling the second hole with conductive material to form the second tier electrically connected to the first tier.
A method of manufacturing a semiconductor device, the method comprising:
- electrically connecting a semiconductor die to one or more first redistribution layers, the semiconductor die having a top surface, a bottom surface, and one or more side surfaces adjoining the top surface to the bottom surface;
- forming a first tier of a conductive pillar such that the first tier is peripherally beyond the one or more side surfaces of the semiconductor die and the first tier is electrically connected to the one or more first redistribution layers;
- forming a second tier of the conductive pillar such that the second tier is on and electrically connected to the first tier of the conductive pillar;
- and
- forming one or more second redistribution layers over the top surface of the semiconductor die and electrically connected to the second tier of the conductive pillar.
A method of manufacturing a semiconductor device, the method comprising:
- operatively coupling a plurality of interconnection structures on a bottom surface of a semiconductor die to one or more first redistribution layers;
- and
- forming one or more conductive pillars about a periphery of the semiconductor die and electrically connected to the one or more first redistribution layers, each conductive pillar comprising a plurality of stacked tiers, wherein said forming the one or more conductive pillars comprises forming each conductive pillar of the one or more conductive pillars with an aspect ratio that is greater than or equal to two.
Dependencies are inferred from the claim text.