Nitrogen-containing compounds for etching semiconductor structures
AssigneeAmerican Air Liquide, Inc.
InventorsVijay Surla, Rahul Gupta, Venkateswara R. Pallem
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Abstract
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
Claims19
A method of depositing an etch-resistant polymer layer on a substrate, the method comprising:
- introducing a vapor of an organofluorine compound into a reaction chamber containing a substrate, the organofluorine compound having a formula selected from the group consisting of N≡C—R1, wherein R1 has the formula HaFbCc and a=1-11, b=1-11, and c=1-5;
- (N≡C—)—(R2)—(—C≡N), wherein R2 has the formula HaFbCc with a=0-11, b=1-11, and c=1-5;
- and R1x[—C═N(R2z)]y, wherein x=1-2, y=1-2, z=0-1, x+z=1-3, and each R1 and R2 independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5;
- and
- plasma activating the organofluorine compound to form the etch-resistant polymer layer on the substrate,
- wherein the organofluorine compound having a purity ranging from approximately 95% to approximately 99.999% by volume and comprising between approximately 10 parts per trillion to approximately 5% by volume water vapor impurities.
A method of depositing an N-containing polymer passivation layer on a substrate, the method comprising:
- introducing a vapor of an organofluorine compound into a reaction chamber containing a substrate, the organofluorine compound having a formula selected from the group consisting of N≡C—R1, wherein R1 has the formula HaFbCc and a=1-11, b=1-11, and c=1-5;
- (N≡C—)—(R2)—(—C≡N), wherein R2 has the formula HaFbCc with a=0-11, b=1-11, and c=1-5;
- and R1x[—C═N(R2z)]y, wherein x=1-2, y=1-2, z=0-1, x+z=1-3, and each R1 and R2 independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5;
- and
- producing fragments of the organofluorine compound by activating a plasma to form the N-containing polymer passivation layer on the substrate,
- wherein the organofluorine compound having a purity ranging from approximately 95% to approximately 99.999% by volume and comprising between approximately 10 parts per trillion to approximately 5% by volume water vapor impurities.
Dependencies are inferred from the claim text.