Substrate processing method

A substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side, the method comprising:

• a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer;
• and
• a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas,
• wherein processing time of the first etching step and processing time of the second etching step are set such that a surface height of the first silicon oxide layer becomes equal to a surface height of the second silicon oxide layer when the first etching step and the second etching step are completed.