Fabrication method for thin film transistor, thin film transistor and display apparatus

A thin film transistor, comprising:

• a substrate and an active layer, a gate insulating layer, a gate, and a capacitive insulating layer sequentially formed on a side of the substrate, wherein the thin film transistor is a hydrogen-blocking layer, and the hydrogen-blocking layer is disposed on a side of the capacitive insulating layer facing away from the substrate, and covering the capacitive insulating layer;
• and the hydrogen-blocking layer is for blocking the outwardly diffusion of the hydrogen ions provided by the capacitive insulating layer during the hydrogenation treatment.

A display apparatus, comprising a thin film transistor, the thin film transistor comprising:

• a substrate and an active layer, a gate insulating layer, a gate, and a capacitive insulating layer sequentially formed on a side of the substrate, wherein the thin film transistor further comprises a hydrogen-blocking layer, and the hydrogen-blocking layer is disposed on a side of the capacitive insulating layer facing away from the substrate, and covering the capacitive insulating layer;
• and the hydrogen-blocking layer is for blocking the outwardly diffusion of the hydrogen ions provided by the capacitive insulating layer during the hydrogenation treatment.