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US 10,256,097 B2Granted
Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
AssigneeInfineon Technologies AG
InventorsRavi Keshav Joshi, Romain Esteve, Roland Rupp, Francisco Javier Santos Rodriguez, Gerald Unegg
Life of this patent
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Abstract
A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. Between neighboring ones of the interface particles, the metal contact structure directly adjoins the silicon carbide semiconductor body.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming, on a process surface of a silicon carbide body, a starting layer from a material comprising a silicide-forming metal;
- and
- forming, from the starting layer and a portion of the silicon carbide body, isolated interface particles comprising a silicide kernel and a carbon cover, wherein a connection portion of the process surface between the isolated interface particles is exposed.
Dependencies are inferred from the claim text.