Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system

A method for performing location specific processing of a microelectronic workpiece, the method comprising:

• collecting parametric data relating to at least a portion of the microelectronic workpiece, the parametric data including a spatial profile of a measured attribute of the microelectronic workpiece;
• identifying a target region for corrective processing using the collected parametric data;
• placing a microelectronic workpiece in a beam processing system;
• selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece and based on a dimension of the target region;
• generating a processing beam;
• and
• processing the target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece,
• wherein the processing beam includes a neutral beam, a charged particle beam, a gas cluster beam (GCB), or a gas cluster ion beam (GCIB), or any portion thereof, or any combination thereof.