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US 10,256,094 B2Granted
Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsRachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
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Abstract
A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
Claims12
A method comprising:
- providing an off-axis 4H—SiC substrate;
- and
- etching the surface of the substrate with an inert gas.
A method comprising:
- providing a 4° off-axis 4H—SiC substrate;
- etching the surface of the substrate with hydrogen;
- and
- growing a doped buffer layer directly on the substrate after the etching.
1 more element
Dependencies are inferred from the claim text.