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US 10,256,093 B2Granted
Selective area growth of semiconductors using patterned sol-gel materials
AssigneeAlliance for Sustainable Energy, LLC
InventorsEmily L. Warren, Adele Clare Tamboli
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Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Claims15
A method comprising:
- first forming a protective layer on a first region and a second region of a substrate;
- and further comprising the additional steps of forming a pattern of a sol-gel material on the first region of the substrate;
- and
- then removing the protective layer from the second region of the substrate;
- and
- then depositing a semiconductor material on the second region of the substrate by selective area growth comprising nucleating the semiconductor material at a growth rate between 0.5 and 2.0 microns per hour and a V/III ratio between 10 and 250, wherein the second region is adjacent to the first region;
- and
- wherein the semiconductor material and the substrate are lattice mismatched.
5 more elements
Dependencies are inferred from the claim text.