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US 10,256,090 B2Granted
Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
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Abstract
A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
Claims11
A method comprising:
- providing an off-axis silicon carbide substrate;
- and
- etching the surface of the substrate with an inert gas.
Dependencies are inferred from the claim text.