Semiconductor processing systems having multiple plasma configurations

A system for semiconductor processing, the system comprising:

• a chamber configured to contain a semiconductor substrate in a processing region of the chamber, the chamber comprising a lid and sidewalls defining an internal volume of the chamber;
• a first remote plasma unit fluidly coupled with a first access of the chamber defined through the lid and configured to deliver a first precursor into the chamber through the first access;
• a second remote plasma unit fluidly coupled with a second access of the chamber separate from the first access, the second access defined through the lid and configured to deliver a second precursor into the chamber through the second access, wherein the first and second accesses of the chamber provide access to a mixing region in the internal volume of the chamber separate from and fluidly coupled with the processing region of the chamber, and wherein the mixing region is configured to allow the first and second precursors to interact with each other in the internal volume of the chamber and externally from the processing region of the chamber;
• a showerhead positioned within the chamber to at least partially define the mixing region from below, wherein the lid defines the mixing region from above;
• an annular insert positioned adjacent the showerhead and defining an exterior of the mixing region;
• an ion suppressor positioned within the chamber between the showerhead and the substrate processing region of the chamber, wherein the ion suppressor comprises a plate defining apertures, and wherein the ion suppressor is configured to operate as an electrically grounded electrode for a capacitively-coupled plasma formable within the chamber;
• an annular dielectric insert positioned between the ion suppressor and the showerhead, wherein the annular dielectric insert is in contact with the ion suppressor;
• and
• a gas distribution assembly positioned between the ion suppressor and the processing region of the chamber, wherein the gas distribution assembly is in direct contact with the ion suppressor.

A system for semiconductor processing, the system comprising:

• a chamber configured to contain a semiconductor substrate in a processing region of the chamber, the chamber comprising a lid and sidewalls defining an internal volume of the chamber;
• a first remote plasma unit fluidly coupled with a first access of the chamber defined through the lid and configured to deliver a first precursor into a mixing region of in the internal volume of the chamber, wherein the mixing region is separate from and fluidly coupled with the processing region of the chamber;
• a second remote plasma unit fluidly coupled with a second access of the chamber separate from the first access, the second access defined through the lid and configured to deliver a second precursor into the mixing region in the internal volume of the chamber through the second access, wherein the mixing region is configured to allow the first and second precursors to interact with each other in the internal volume of the chamber and externally from the processing region of the chamber;
• a first annular insert positioned downstream of and contacting the lid and configured to at least partially define the sidewalls;
• a showerhead positioned downstream of and contacting the first annular insert, wherein the showerhead defines a plurality of apertures, and wherein the lid, the first annular insert, and the showerhead are configured to collectively define the mixing region;
• a second annular insert positioned downstream of and contacting the showerhead and configured to at least partially define the sidewalls;
• a faceplate positioned downstream of the showerhead and spaced apart from the showerhead by the second annular insert, wherein the faceplate defines a plurality of apertures;
• a third annular insert positioned downstream of and contacting the faceplate and configured to at least partially define the sidewalls;
• an ion suppressor positioned downstream of and contacting the third annular insert, wherein the ion suppressor defines a plurality of apertures, wherein the faceplate is electrically coupled with an RF source, wherein the ion suppressor is electrically grounded, wherein the third annular insert is configured to electrically isolate the faceplate and ion suppressor from one another, wherein the faceplate, the ion suppressor, and the third annular insert are configured to define a chamber plasma region, wherein the mixing region, the chamber plasma region, and the processing region are arranged along an axis of the chamber, wherein the faceplate and the ion suppressor are configured to operate as electrodes for generating a capacitively-coupled plasma within the chamber plasma region, wherein each of the plurality of apertures of the faceplate is configured with a tapered portion extending outward toward the chamber plasma region, and wherein each of the plurality of apertures of the ion suppressor is configured with a tapered portion extending outward toward the chamber plasma region;
• a gas distribution assembly positioned downsteam of and contacting the ion suppressor, wherein the gas distribution assembly is configured to at least partially define the processing region, wherein the gas distribution assembly further includes an annular body configured to at least partially define the sidewalls, and wherein the showerhead, the second annular insert, the faceplate, the third annular insert, and the ion suppressor collectively define a flow passage along the axis of the chamber for the first and second precursors to flow from the mixing region to the processing region;
• and
• a pedestal configured to support the semicondcutor substrate in the processing region, wherein the showerhead, the faceplate, the ion suppressor, and the gas distribution assembly, and the substrate support are coaxially aligned along the axis of the chamber.