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US 10,256,045 B2Granted
Capacitor
AssigneeMurata Manufacturing Co., Ltd.
InventorsHiromasa Saeki, Noriyuki Inoue, Takeo Arakawa, Naoki Iwaji
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Abstract
A capacitor that includes a porous metal base material, a first buffer layer formed by an atomic layer deposition method on the porous metal base material, a dielectric layer formed by an atomic layer deposition method on the first buffer layer, and an upper electrode formed on the dielectric layer.
Claims21
A capacitor comprising:
- a porous-metal base material having a central high porosity part and a lateral low porosity party, the high porosity part having a porosity of at least 25%, the low porosity part having a porosity of not more than 60% of the porosity of the high porosity part;
- at least one first buffer layer on the porous metal base material;
- a dielectric layer on the first buffer layer;
- and
- an upper electrode on the dielectric layer.
2 more elements
A method for manufacturing a capacitor, the method comprising:
- forming at least one first buffer layer on a porous metal base material having a central high porosity part and a lateral low porosity part, the high porosity part having a porosity of at least 25%, the low porosity part having a porosity which is not more than 60% of the porosity of the high porosity part;
- forming a dielectric layer on the first buffer layer;
- and
- forming an electrode on the dielectric layer.
1 more element
Dependencies are inferred from the claim text.