Semiconductor device

A semiconductor device comprising:

• a storage element having a current drawing capability that changes according to a value of data to be stored;
• a bit line connected to an output node of the storage element;
• a pre-charge transistor, a source of the pre-charge transistor being connected to the bit line, a pre-charge voltage being supplied to a drain of the pre-charge transistor, and a pre-charge control signal being supplied to a gate of the pre-charge transistor;
• a clamp voltage generation circuit comprising a clamp voltage output transistor, a source of the clamp voltage output transistor being connected to a back gate thereof, the pre-charge voltage being supplied to the source, a constant current being supplied to a drain of the clamp voltage output transistor, a gate of the clamp voltage output transistor being connected to the drain thereof, and the clamp voltage generation circuit being configured to output a voltage generated in the gate as a clamp voltage;
• a clamp transistor, the clamp voltage being supplied to a gate of the clamp transistor, a source of the clamp transistor being connected to the bit line, and a back gate of the clamp transistor being connected to a ground line;
• and
• a sense amplifier connected to a drain of the clamp transistor, the sense amplifier being configured to compare a reference current having a predetermined current value with a memory current drawn by the storage element through the clamp transistor and output an output signal.