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US 10,255,953 B2Granted
Bi-directional RRAM decoder-driver
AssigneeWestern Digital Technologies, Inc.
InventorsJames Edwin O'Toole, Ward Parkinson, Daniel Robert Shepard, Thomas Michael Trent
Life of this patent
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Abstract
The present disclosure generally relates to the fabrication of and methods for creating a reversible tri-state memory device which provides both forward and reverse write and read drive to a bi-directional RRAM cell, thus allowing writing in the forward and reverse directions. The memory device, however, utilizes a single transistor “on pitch” which fits between two metal lines traversing the array tile.
Claims17
A method for creating an inverter, comprising:
- selecting a word line corresponding to a first state via a current source;
- and
- applying a first voltage to a first inverter line coupled to the word line to bring the first inverter line to ground, wherein the first voltage causes the word line to be brought to a second state, wherein the second state is lower than the first state, and wherein the first voltage turns on an ovonic threshold switch (OTS) disposed between the word line and first inverter line.
A method for creating an inverter, comprising:
- selecting a word line corresponding to a first state via a current source;
- applying a first voltage to a first inverter line coupled to the word line to bring the first inverter line to ground, wherein the first voltage causes the word line to be brought to a second state, wherein the second state is lower than the first state, and wherein the first voltage turns on an ovonic threshold switch (OTS) disposed between the word line and first inverter line;
- selecting a bit line corresponding to the second state via an n-channel transistor;
- and
- applying a second voltage to a second inverter line coupled to the bit line to actively drive the second inverter line to the first state via a p-channel transistor operatively connected to a power supply, wherein the second voltage causes the bit line to correspond to the first state, and wherein the second voltage turns on the OTS.
2 more elements
A method for creating an inverter, comprising:
- selecting a word line a first state via a current source;
- and
- applying a first voltage to a first inverter line coupled to the word line to bring the first inverter line to ground, wherein the first voltage causes the word line to be brought to a second state, wherein the second state is higher than the first state, and wherein the first voltage turns on an ovonic threshold switch (OTS) disposed between the word line and first inverter line.
A method for creating an inverter, comprising:
- selecting a word line a first state via a current source;
- applying a first voltage to a first inverter line coupled to the word line to bring the first inverter line to ground, wherein the first voltage causes the word line to be brought to a second state, wherein the second state is higher than the first state, and wherein the first voltage turns on an ovonic threshold switch (OTS) disposed between the word line and first inverter line;
- selecting a bit line corresponding to the second state;
- and
- applying a second voltage to a second inverter line coupled to the bit line to actively drive the second inverter line to the first state via a transistor operatively connected to a power supply, wherein the second voltage causes the bit line to correspond to the first state, and wherein the second voltage turns on the OTS.
2 more elements
A reversible memory device, comprising:
- a word line;
- a bit line disposed perpendicular to the word line;
- a memory element disposed between the word line and the bit line;
- a select element coupled to the memory element, wherein the select element is disposed adjacent the word line;
- a first inverter line directly coupled to the word line, the first inverter line disposed perpendicular to the word line;
- and
- a second inverter line directly coupled to the bit line, the second inverter line disposed perpendicular to the bit line.
4 more elements
A reversible memory device, comprising:
- a word line;
- a bit line disposed perpendicular to the word line;
- a memory element disposed between the word line and the bit line;
- a select element coupled to the memory element, wherein the select element is disposed adjacent the word line;
- a first inverter line coupled to the word line;
- and
- a second inverter line coupled to the bit line, wherein the select element comprises an undoped polysilicon material.
4 more elements
Dependencies are inferred from the claim text.