Temperature control method, control apparatus, and plasma processing apparatus

A control apparatus used in a plasma processing apparatus that performs a plasma process including a plurality of steps on a workpiece and is capable of changing a temperature setting for each step of the plasma process, the control apparatus comprising:

• a transfer control unit that performs at least one of an entry process for transferring the workpiece into a processing chamber of the plasma processing apparatus and an exit process for transferring the workpiece out of the processing chamber;
• a process execution unit that executes the plasma process including the plurality of steps;
• and
• a temperature control unit that performs at least one of a first temperature control and a second temperature control, the first temperature control including controlling a temperature of an electrostatic chuck to a temperature setting of a next process upon completing an execution of a predetermined one of the plurality of steps of the plasma process, and the second temperature control including controlling the temperature of the electrostatic chuck to the temperature setting of the next process while performing at least one of the entry process for transferring the workpiece into the processing chamber of the plasma processing apparatus and the exit process for transferring the workpiece out of the processing chamber,
• wherein the temperature control unit further reads ahead the temperature setting of the next process, while performing at least one of the entry process for transferring the workpiece into the processing chamber of the plasma processing apparatus and the exit process for transferring the workpiece out of the processing chamber, upon completing the execution of the predetermined one of the plurality of steps of the plasma process before said at least one of the first temperature control and the second temperature control.

A plasma processing apparatus comprising:

• a processing chamber;
• a gas supply source that supplies gas to the processing chamber;
• a plasma source that supplies power for plasma generation to the processing chamber and generates plasma from gas within the processing chamber;
• a temperature control unit that controls a temperature of at least one of a mounting table in the processing chamber, an upper electrode in the processing chamber, a deposition shield in the processing chamber, and the processing chamber;
• a transfer control unit that performs at least one of an entry process for transferring a workpiece into the processing chamber and an exit process for transferring the workpiece out of the processing chamber;
• and
• a process execution unit that executes a plasma process including a plurality of steps using the generated plasma;
• wherein the temperature control unit performs at least one of a first temperature control and a second temperature control, the first temperature control including controlling a temperature of an electrostatic chuck to a temperature setting of a next process upon completing an execution of a predetermined one of the plurality of steps of the plasma process, and the second temperature control including controlling the temperature of the electrostatic chuck to the temperature setting of the next process while performing at least one of the entry process for transferring the workpiece into the processing chamber of the plasma processing apparatus and the exit process for transferring the workpiece out of the processing chamber,
• wherein the temperature control unit further reads ahead the temperature setting of the next process, while performing at least one of the entry process for transferring the workpiece into the processing chamber of the plasma processing apparatus and the exit process for transferring the workpiece out of the processing chamber, upon completing the execution of the predetermined one of the plurality of steps of the plasma process before said at least one of the first temperature control and the second temperature control.