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US 10,254,652 B2Granted
Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
AssigneeInternational Business Machines Corporation
InventorsEkmini A. De Silva, Karen E. Petrillo, Indira P. Seshadri
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Abstract
An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.
Claims20
An extreme ultraviolet lithography pattern stack, comprising:
- an inorganic hardmask layer, wherein the inorganic hardmask layer is a silicon-containing material, a metal oxide (MOx), a metal nitride (MNx), a metal carbide (MCx), or combinations thereof;
- an under layer on the inorganic hardmask layer, wherein the under layer is a polymeric layer;
- and
- a resist layer on the under layer, wherein the resist layer is sensitive to extreme ultraviolet light with a wavelength of about 13.5 nm.
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An extreme ultraviolet lithography pattern stack, comprising:
- an inorganic hardmask layer;
- an under layer directly on the inorganic hardmask layer, where the under layer is a self-assembled monolayer;
- and a resist layer on the under layer, wherein the resist layer is sensitive to extreme ultraviolet light with a wavelength of about 13.5 nm.
A method of forming an extreme ultraviolet lithography pattern stack, comprising:
- forming an inorganic hardmask layer on a substrate, wherein the inorganic hardmask layer is a metal oxide (MOx), a metal nitride (MNx), a metal carbide (MCx), or combinations thereof;
- forming an under layer directly on the inorganic hardmask layer, where the under layer is a polymeric layer or a self-assembled monolayer;
- and
- forming a resist layer directly on the under layer, wherein the resist layer is sensitive to extreme ultraviolet light with a wavelength of about 13.5 nm.
1 more element
Dependencies are inferred from the claim text.