Low temperature SC1 strippable oxysilane-containing coatings

A coated substrate comprising:

• the substrate, wherein the substrate is a silicon wafer or coated silicon wafer;
• an organic planarization layer in contact with the substrate;
• a photoresist layer;
• and
• a middle layer positioned between the organic planarization layer and the photoresist layer, wherein the middle layer is formed from a composition comprising:
• at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group;
• an endcapping agent;
• and
• a solvent.

A method of patterning a substrate comprising the steps of:

• sequentially applying an organic planarization layer, a middle layer, and a photoresist layer to a surface of the substrate, the middle layer formed from a composition comprising
• at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group, an endcapping agent, and a solvent;
• patterning the photoresist layer using photolithography and removing a portion of the photoresist layer to transfer the pattern to the photoresist layer;
• removing a portion of the middle layer to transfer the pattern to the middle layer;
• removing the patterned photoresist layer and removing a portion of the organic planarization layer to transfer the pattern to the organic planarization layer;
• removing the patterned middle layer and removing a portion of the substrate to transfer the pattern to the substrate;
• and
• removing the patterned organic planarization layer.