Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells

A non-volatile storage apparatus, comprising:

• a plurality of vertically displaced reversible resistance-switching elements that are physically separate from each other;
• a plurality of vertically displaced control line layers, each control line layer positioned vertically between two consecutive reversible resistance-switching elements, each control line layer comprising an offset layer and an associated word line layer, the offset layer shields the associated word line layer form controlling one of the two consecutive reversible resistance-switching elements;
• a vertical channel layer positioned between the vertically displaced reversible resistance-switching elements and the vertically displaced control line layers;
• and
• a bit line connected to a first end of the channel layer;
• each control line layer is positioned between an upper reversible resistance-switching element and a lower reversible resistance-switching element;
• the offset layer for each control line layer is on a first side of the control line layer facing the lower reversible resistance-switching element such that the word line layer is unable to selectively control the lower reversible resistance-switching element;
• the word line layer for each control line layer is on a second side of the control line layer facing the upper reversible resistance-switching element such that the word line layer is configured to selectively control the upper reversible resistance-switching element.

A non-volatile storage apparatus, comprising:

• a switch;
• a core comprising two vertical pillars of barrier layers separated by dielectric material positioned above the switch;
• a first plurality of vertically displaced active layers positioned on a first side of the core in contact with one of the vertical pillars of barrier layers;
• a second plurality of vertically displaced active layers positioned on a second side of the core in contact with one of the vertical pillars of barrier layers;
• a first vertical channel connected to the switch and positioned along a portion of the first side of the core, the first vertical channel at least partially surrounding each of the first plurality of vertically displaced active layers on three sides of each of the first plurality of vertically displaced active layers;
• and
• a second vertical channel connected to the switch and positioned along a portion of the second side of the core, the second vertical channel at least partially surrounding each of the second plurality of vertically displaced active layers on three sides of each of the second plurality of vertically displaced active layers.